Philips Semiconductors
Product specification
Three quadrant triacs
BTA208 series D, E and F
guaranteed commutation
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Passivated
guaranteed
commutation
SYMBOL
PARAMETER
MAX.
MAX.
UNIT
triacs in a plastic envelope intended for
use in motor control circuits or with other
BTA208-
600D
-
highly inductive loads. These devices
BTA208-
600E
800E
balance the requirements of commutation
BTA208-
600F
800F
performance and gate sensitivity. The
V
DRM
Repetitive peak
600
800
V
"sensitive gate" E series and "logic level"
off-state voltages
D series are intended for interfacing with
I
T(RMS)
RMS on-state current
8
8
A
low
power
drivers,
including
micro
I
TSM
Non-repetitive peak on-state
65
65
A
controllers.
current
PINNING - TO220AB
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
main terminal 1
2
main terminal 2
3
gate
tab
main terminal 2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-600
-800
V
DRM
Repetitive peak off-state
-
600
1
800
V
voltages
I
T(RMS)
RMS on-state current
full sine wave;
-
8
A
T
mb
102 C
I
TSM
Non-repetitive peak
full sine wave;
on-state current
T
j
= 25 C prior to
surge
t = 20 ms
-
65
A
t = 16.7 ms
-
72
A
I
2
t
I
2
t for fusing
t = 10 ms
-
21
A
2
s
dI
T
/dt
Repetitive rate of rise of
I
TM
= 12 A; I
G
= 0.2 A;
100
A/
s
on-state current after
dI
G
/dt = 0.2 A/
s
triggering
I
GM
Peak gate current
-
2
A
V
GM
Peak gate voltage
-
5
V
P
GM
Peak gate power
-
5
W
P
G(AV)
Average gate power
over any 20 ms
-
0.5
W
period
T
stg
Storage temperature
-40
150
C
T
j
Operating junction
-
125
C
temperature
T1
T2
G
1 2 3
tab
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 6 A/
s.
February 2000
1
Rev 1.000
Philips Semiconductors
Product specification
Three quadrant triacs
BTA208 series D, E and F
guaranteed commutation
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-mb
Thermal resistance
full cycle
-
-
2.0
K/W
junction to mounting base
half cycle
-
-
2.4
K/W
R
th j-a
Thermal resistance
in free air
-
60
-
K/W
junction to ambient
STATIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
BTA208-
...D
...D
...E
...F
I
GT
Gate trigger current
2
V
D
= 12 V; I
T
= 0.1 A
T2+ G+
-
0.8
5
10
25
mA
T2+ G-
-
2.0
5
10
25
mA
T2- G-
-
3.2
5
10
25
mA
I
L
Latching current
V
D
= 12 V; I
GT
= 0.1 A
T2+ G+
-
7.2
15
25
30
mA
T2+ G-
-
8.2
25
30
40
mA
T2- G-
-
11.0
25
30
40
mA
I
H
Holding current
V
D
= 12 V; I
GT
= 0.1 A
-
5.3
15
25
30
mA
...D, E, F
V
T
On-state voltage
I
T
= 10 A
-
1.3
1.65
V
V
GT
Gate trigger voltage
V
D
= 12 V; I
T
= 0.1 A
-
0.7
1.5
V
V
D
= 400 V; I
T
= 0.1 A;
0.25
0.4
-
V
T
j
= 125 C
I
D
Off-state leakage current
V
D
= V
DRM(max)
;
-
0.1
0.5
mA
T
j
= 125 C
DYNAMIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
BTA208-
...D
...E
...F
...D
dV
D
/dt
Critical rate of rise of
V
DM
= 67% V
DRM(max)
;
20
60
70
60
-
V/
s
off-state voltage
T
j
= 110 C; exponential
waveform; gate open
circuit
dI
com
/dt
Critical rate of change of
V
DM
= 400 V; T
j
= 110 C;
1.8
3.5
5
8.5
-
A/ms
commutating current
I
T(RMS)
= 8 A;
dV
com
/dt = 20V/
s; gate
open circuit
dI
com
/dt
Critical rate of change of
V
DM
= 400 V; T
j
= 110 C;
5
16
19
100
commutating current
I
T(RMS)
= 8 A;
-
A/ms
dV
com
/dt = 0.1V/
s; gate
open circuit
...D, E, F
t
gt
Gate controlled turn-on
I
TM
= 12 A; V
D
= V
DRM(max)
;
-
-
-
2
-
s
time
I
G
= 0.1 A; dI
G
/dt = 5 A/
s
2 Device does not trigger in the T2-, G+ quadrant.
February 2000
2
Rev 1.000
Philips Semiconductors
Product specification
Three quadrant triacs
BTA208 series D, E and F
guaranteed commutation
Fig.1. Maximum on-state dissipation, P
tot
, versus rms
on-state current, I
T(RMS)
, where
= conduction angle.
Fig.2. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus pulse width t
p
, for
sinusoidal currents, t
p
20ms.
Fig.3. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.4. Maximum permissible rms current I
T(RMS)
,
versus mounting base temperature T
mb
.
Fig.5. Maximum permissible repetitive rms on-state
current I
T(RMS)
, versus surge duration, for sinusoidal
currents, f = 50 Hz; T
mb
102C.
Fig.6. Normalised gate trigger voltage
V
GT
(T
j
)/ V
GT
(25C), versus junction temperature T
j
.
0
2
4
6
8
10
0
2
4
6
8
10
12
= 180
120
90
60
30
IT(RMS) / A
Ptot / W
Tmb(max) / C
125
121
117
113
109
105
101
1
-50
0
50
100
150
0
2
4
6
8
10
BT137
102 C
Tmb / C
IT(RMS) / A
10us
100us
1ms
10ms
100ms
10
100
1000
T / s
ITSM / A
dI /dt limit
T
T
ITSM
time
I
Tj initial = 25 C max
T
0.01
0.1
1
10
0
5
10
15
20
25
surge duration / s
IT(RMS) / A
1
10
100
1000
0
10
20
30
40
50
60
70
Number of half cycles at 50Hz
ITSM / A
T
ITSM
time
I
T
Tj initial = 25 C max
-50
0
50
100
150
0.4
0.6
0.8
1
1.2
1.4
1.6
Tj / C
VGT(Tj)
VGT(25 C)
February 2000
3
Rev 1.000
Philips Semiconductors
Product specification
Three quadrant triacs
BTA208 series D, E and F
guaranteed commutation
Fig.7. Normalised gate trigger current
I
GT
(T
j
)/ I
GT
(25C), versus junction temperature T
j
.
Fig.8. Normalised latching current I
L
(T
j
)/ I
L
(25C),
versus junction temperature T
j
.
Fig.9. Normalised holding current I
H
(T
j
)/ I
H
(25C),
versus junction temperature T
j
.
Fig.10. Typical and maximum on-state characteristic.
Fig.11. Transient thermal impedance Z
th j-mb
, versus
pulse width t
p
.
Fig.12. Minimum, critical rate of change of
commutating current, dI
com
/dt versus junction
temperature, dV
com
/dt = 20V/
s.
0
0.5
1
1.5
2
2.5
3
-50
0
50
100
150
T2+ G+
T2+ G-
T2- G-
Tj/C
IGT(Tj)
IGT(25C)
0
0.5
1
1.5
2
2.5
3
0
5
10
15
20
25
VT / V
IT / A
Tj = 125 C
Tj = 25 C
typ
max
Vo = 1.264 V
Rs = 0.0378 Ohms
-50
0
50
100
150
0
0.5
1
1.5
2
2.5
3
Tj / C
IL(Tj)
IL(25 C)
10us
0.1ms
1ms
10ms
0.1s
1s
10s
0.01
0.1
1
10
tp / s
Zth j-mb (K/W)
t
p
P
t
D
bidirectional
unidirectional
-50
0
50
100
150
0
0.5
1
1.5
2
2.5
3
Tj / C
IH(Tj)
IH(25C)
1
10
100
20
40
60
80
100
120
140
F TYPE
E TYPE
D TYPE
Tj/C
dIcom/dt (A/ms)
February 2000
4
Rev 1.000
Philips Semiconductors
Product specification
Three quadrant triacs
BTA208 series D, E and F
guaranteed commutation
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Fig.13. SOT78 (TO220AB). pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for SOT78 (TO220) envelopes.
2. Epoxy meets UL94 V0 at 1/8".
10,3
max
3,7
2,8
3,0
3,0 max
not tinned
1,3
max
(2x)
1 2 3
2,4
0,6
4,5
max
5,9
min
15,8
max
1,3
2,54 2,54
0,9 max (3x)
13,5
min
February 2000
5
Rev 1.000
Philips Semiconductors
Product specification
Three quadrant triacs
BTA208 series D, E and F
guaranteed commutation
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 2000
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
February 2000
6
Rev 1.000
PDF 
ZIP